Datasheet4U Logo Datasheet4U.com

BUK9D23-40E - N-channel Trench MOSFET

BUK9D23-40E Description

BUK9D23-40E 40 V, N-channel Trench MOSFET 13 December 2017 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Tr.

BUK9D23-40E Features

* Extended temperature range Tj = 175 °C
* Side wettable flanks for optical solder inspection
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
* Trench MOSFET technology

BUK9D23-40E Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 10 V; Tsp

📥 Download Datasheet

Preview of BUK9D23-40E PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • BUK9006-55A - N-channel Enhancement mode field-effect power Transistor (NXP Semiconductors)
  • BUK9107-40ATC - N-channel TrenchPLUS logic level FET (NXP)
  • BUK9107-55ATE - N-channel TrenchPLUS logic level FET (NXP)
  • BUK9120-48TC - PowerMOS transistor Voltage clamped logic level FET (NXP)
  • BUK9207-30B - N-Channel MOSFET (NXP Semiconductors)
  • BUK9209-40B - TrenchMOS logic level FET (NXP Semiconductors)
  • BUK9212-55B - TrenchMOS logic level FET (NXP Semiconductors)
  • BUK9213-30A - TrenchMOS logic level FET (NXP Semiconductors)

📌 All Tags

N-channel Trench MOSFET nexperia
nexperia BUK9D23-40E-like datasheet