BUK9006-55A - N-channel Enhancement mode field-effect power Transistor

NXP Semiconductors

The BUK9006-55A by NXP Semiconductors is a N-channel Enhancement mode field-effect power Transistor. Below is the official datasheet preview.

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BUK9006-55A N-channel Enhancement mode field-effect power Transistor by NXP Semiconductors - Datasheet Preview — Official preview page of the **BUK9006-55A** N-channel Enhancement mode field-effect power Transistor datasheet (NXP Semiconductors).

Datasheet Details

Part number	BUK9006-55A
Manufacturer	NXP Semiconductors
File Size	250.39 KB
Description	N-channel Enhancement mode field-effect power Transistor
Datasheet	BUK9006-55A_NXPSemiconductors.pdf
Additional preview pages of the BUK9006-55A datasheet.

BUK9006-55A Product details

Description

N-channel enhancement mode ﬁeld-effect power transistor available as a bare die using Philips General Purpose Automotive (GPA) TrenchMOS™ technology.

Features

s 25 A testing of individual die s Inductive energy testing of individual die s Life-tested to Q101 at 175 °C s Automatic visual inspection. 1.3.

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Published: Jul 7, 2009 |