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BAV756S - High-speed switching diodes

BAV756S Description

BAV756S High-speed switching diode 28 October 2022 Product data sheet 1.General .
High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

BAV756S Features

* High switching speed: trr ≤ 4 ns
* Low capacitance: Cd ≤ 2 pF
* Low leakage current
* Reverse voltage: VR ≤ 90 V
* Very small SMD plastic packages

BAV756S Applications

* High-speed switching
* General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per diode IR reverse current VR reverse voltage trr reverse recovery time Conditions VR = 80 V; Tamb = 25 °C IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(me

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