BAS16L-Q Datasheet - nexperia

BAS16L-Q, High-speed switching diode

BAS16L-Q High-speed switching diode 17 September 2021 Product data sheet 1.
General description High-speed switching diode, encapsulated in a lead l

Features

* High switching speed: trr ≤ 4 ns
* Low capacitance
* Low leakage current
* Reverse voltage: VR ≤ 100 V
* Repetitive peak reverse voltage: VRRM ≤ 100 V
* Small SMD plastic package
* Qualified according to AEC-Q101 and recommended for use in au

Applications

* 3. Applications
* High-speed switching
* General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per diode VR reverse voltage IR reverse current trr reverse recovery time Conditions VR = 80 V; Tamb = 25 °C IF = 10 mA; IR = 10 mA;

BAS16L-Q-nexperia.pdf