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BAS16GW High-speed switching diode

BAS16GW Description

BAS16GW High-speed switching diode 23 November 2016 Product data sheet 1.General .
High-speed switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. High swi.

BAS16GW Features

* High switching speed: trr ≤ 4 ns
* Low leakage current
* Reverse voltage VR ≤ 100 V
* Low capacitance: Cd ≤ 1.5 pF
* Small SMD plastic package

BAS16GW Applications

* High-speed switching at high voltage
* General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter VR reverse voltage IR reverse current trr reverse recovery time Conditions Tj = 25 °C VR = 80 V; pulsed; Tj = 25 °C IF = 10 mA; IR = 10 mA

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