Description
Nell High Power Products
N-Channel Power MOSFET (18A, 200Volts)
The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors.They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation.They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators, convertors, motor drivers and drivers for high power bipolar switching transistors requiring h
Features
- RDS(ON) = 0.180Ω @ VGS = 10V
Ultra low gate charge(63nC max. )
Low reverse transfer capacitance (CRSS = 91pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability 150°C operation temperature
D
GDS TO-220AB (IRF640A)
D
G D S TO-263(D2PAK) (IRF640H)
D (Drain).
