IRF640FI - N-Channel Mosfet Transistor

Inchange Semiconductor

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Datasheet Details

Part number	IRF640FI
Manufacturer	Inchange Semiconductor
File Size	60.17 KB
Description	N-Channel Mosfet Transistor
Datasheet	IRF640FI-InchangeSemiconductor.pdf

IRF640FI Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±20 V V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 40 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF

Features

Low RDS(on) = 0.180Ω(TYP).
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Rugged Gate Oxide Technology.

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Published: Aug 6, 2016 |