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TMS418169A DYNAMIC RANDOM-ACCESS MEMORIES

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Description

This data sheet is applicable to TMS418169A and TMS428169A symbolized by Revision “E”, and subsequent revisions as described in the device symboliz.
PIN NOMENCLATURE The TMS418169A and TMS428169A are 16 777 216-bit dynamic random-access memory (DRAM) devices organized as 1 048 576 words of A[0:9.

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Features

* maximum RAS access times of 50-, 60-, and 70 ns, and the OE RAS VCC VSS W Output Enable Row-Address Strobe 5-V or 3.3-V Supply Ground Write Enable TMS428169A features maximum RAS access times of 60- and 70 ns. All addresses and data-in lines are latched on-chip to simplify system design. Data ou

Applications

* of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessari

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