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TMS418160A DYNAMIC RANDOM-ACCESS MEMORIES

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Description

This data sheet is applicable to TMS418160As symbolized by Revision “E” and subsequent revisions as described in the device symbolization section..
The TMS418160A is a 16 777 216-bit dynamic random-access memory (DRAM) device organized as 1 048 576 words of 16 bits.

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Features

* maximum RAS access times of 50-, 60-, and 70 ns. All address and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility. The TMS418160A is offered in a 42-lead plastic surface-mount SOJ package (DZ suffix). This package is designed for

Applications

* of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessari

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