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LMG3411R150 - GaN FET

Download the LMG3411R150 datasheet PDF. This datasheet also covers the LMG3410R150 variant, as both devices belong to the same gan fet family and are provided as variant models within a single manufacturer datasheet.

Description

The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

Features

  • 1 TI GaN process qualified through accelerated reliability in-.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LMG3410R150-etcTI.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Texas Instruments

Part Number Description
LMG3411R050 Integrated GaN Fet Power Stage
LMG3411R070 GaN
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LMG3410R150 GaN FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product Folder Order Now Technical Documents Tools & Software Support & Community LMG3411R150, LMG3410R150 SNOSD91B – MARCH 2019 – REVISED FEBRUARY 2020 LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection 1 Features •1 TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and layout – Adjustable drive strength for switching performance and EMI control – Digital fault status output signal – Only +12 V of unregulated supply needed • Integrated gate driver – Zero common source inductance – 20-ns propagation delay for high-frequency design – Trimmed gate
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