Description
The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration.
Features
- 1 Independent high-side and low-side TTL logic inputs.
- 1.2 A / 5 A peak source/sink current.
- High-side floating bias voltage rail
Operates up to 100 VDC.
- Internal bootstrap supply voltage clamping.
- Split outputs for adjustable
turnon/turnoff strength.
- 0.6-Ω / 2.1-Ω pulldown/pullup resistance.
- Fast propagation times (28 ns typical).
- Excellent propagation delay matching
(1.5 ns typical).
- Supply rail undervoltage locko.
LM5113-etcTI.pdf
