Description
The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package (SOT23 equivalent footprint) with improved package power dissipation required for high frequency operation.
Features
- n Compound CMOS and bipolar outputs reduce output current variation n 7A sink/3A source current n Fast propagation times (25 ns typical) n Fast rise and fall times (14 ns/12 ns rise/fall with 2 nF load) n Inverting and non-inverting inputs provide either configuration with a single device n Supply rail under-voltage lockout protection n Dedicated input ground (IN_REF) for split supply or single supply operation n Power Enhanced 6-pin LLP package (3.0mm x 3.0mm) n Output swings from VCC to VEE wh.
LM5112_NationalSemiconductor.pdf
