CSD23381F4 Datasheet (Texas Instruments)

CSD23381F4, P-Channel Power MOSFET

This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Product Summary TA = 25°C T

CSD23381F4 Features

* Ultra-Low On-Resistance

* Ultra-Low Qg and Qgd

* High Operating Drain Current

* Ultra-Small Footprint (0402 Case Size)

* 1.0 mm × 0.6 mm

* Ultra-Low Profile

* 0.35 mm Max Height

* Integrated ESD Protection Diode

* Rated >4 kV