ZXMN2B03E6 SOT23-6 N-channel enhancement mode MOSFET

Zetex Semiconductors

Description

ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) (⍀) 0.040 @ VGS= 4.5V 20 0.055 @ VGS=.
This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive. www.

📥 Download Datasheet

ZXMN2B03E6 Datasheet Preview — Preview of ZXMN2B03E6 PDF

Datasheet Specifications

Part number: ZXMN2B03E6
Manufacturer: Zetex Semiconductors
File Size: 604.91 KB
Datasheet: ZXMN2B03E6_ZetexSemiconductors.pdf
Description: SOT23-6 N-channel enhancement mode MOSFET

Features

* low onresistance achievable with low gate drive. Features
* www. DataSheet4U. com D Low on-resistance Fast switching speed Low gate drive capability SOT23-6 package

Applications

* DC-DC converters Power management functions Disconnect switches Motor control D D G Top view 3,000 D D S Ordering information Device ZXMN2B03E6TA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel Device marking 2B3 Issue 1 - September 2006 © Zetex

ZXMN2B03E6 Distributors

📁 Related Datasheet

ZXMN20B28K ZXMN2A01F ZXMN2AMC ZXMN2AMCTA ZXMN2F30FHQ ZXMN0545G4

📌 All Tags

ZXMN2B03E6 SOT23-6 N-channel enhancement mode MOSFET Zetex Semiconductors

Zetex Semiconductors ZXMN2B03E6-like datasheet