Datasheet Details
- Part number
- ZXMN2B03E6
- Manufacturer
- Zetex Semiconductors
- File Size
- 604.91 KB
- Datasheet
- ZXMN2B03E6_ZetexSemiconductors.pdf
- Description
- SOT23-6 N-channel enhancement mode MOSFET
ZXMN2B03E6 Description
ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) (⍀) 0.040 @ VGS= 4.5V 20 0.055 @ VGS=.
This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.
www.
ZXMN2B03E6 Features
* low onresistance achievable with low gate drive. Features
* www. DataSheet4U. com
D
Low on-resistance Fast switching speed Low gate drive capability SOT23-6 package
ZXMN2B03E6 Applications
* DC-DC converters Power management functions Disconnect switches Motor control
D D G Top view
3,000
D D S
Ordering information
Device ZXMN2B03E6TA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel
Device marking
2B3
Issue 1 - September 2006
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