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FMMT495 - NPN SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR

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SOT23 NPN SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL – 7 495 FMMT495 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO Collector Cut-Off Currents Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector-Base Breakdown Voltage ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE 100 100 50 10 100 10 MIN. 170 150 5 100 100 100 0.2 0.3 1.0 1.