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FMMT497 - NPN SILICON PLANAR HIGH VOLTAGE HIGH PERFORMANCE TRANSISTOR

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SOT23 NPN SILICON PLANAR HIGH VOLTAGE HIGH PERFORMANCE TRANSISTOR ISSUE 3 – DECEMBER 1995 COMPLIMENTARY TYPE – PARTMARKING DETAIL – 7 FMMT597 497 FMMT497 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo 100 80 20 75 5 SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg MIN. MAX. VALUE 300 300 5 500 1 200 500 -55 to +150 UNIT V V V 100 100 100 0.2 0.3 1.0 1.0 300 MHz pF nA nA nA V V V V SOT23 UNIT V V V mA A mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).