YJD80G06A N-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

Description

YJD80G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=10V) * RDS.
Split Gate Trench MOSFET technology. Excellent package for heat dissipation. High density cell design for low RDS(ON) Applications.

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Datasheet Specifications

Part number: YJD80G06A
Manufacturer: Yangzhou Yangjie
File Size: 635.01 KB
Datasheet: YJD80G06A-YangzhouYangjie.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Applications

* DC-DC Converters
* Power management functions
* Industrial and Motor Drive applications
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TC=25℃ TC=100℃ Avalan

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YJD80G06A N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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