Datasheet Details
- Part number
- YJD15N10A
- Manufacturer
- Yangzhou Yangjie
- File Size
- 425.70 KB
- Datasheet
- YJD15N10A-YangzhouYangjie.pdf
- Description
- N-Channel Enhancement Mode Field Effect Transistor
YJD15N10A Description
YJD15N10A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=10V) * RDS.
Trench Power MV MOSFET technology.
Excellent package for heat dissipation.
High density cell design for low RDS(ON)
Applications.
YJD15N10A Applications
* DC-DC Converters
* Power management functions
* Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
VDS
100
V
Gate-source Voltage Drain Current Pulsed Drain Current A
TC=25℃ TC=100℃
VGS
±20
V
15
ID
A
10.5
IDM
60
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