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XP6B1K0EU6 - DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Datasheet Details

Part number XP6B1K0EU6
Manufacturer YAGEO
File Size 128.58 KB
Description DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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XP6B1K0EU6 Product details

Description

D1 D2 XP6B1K0 series are innovated design and silicon process technology G1 G2 to achieve the lowest possible on-resistance and fast switching performance.It provides the designer with an extreme efficient device for use in a wide range of power applications.S1 S2 SOT-363 package is ultra-small surface mount package and lead free RoHS compliant.Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS ID@

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