0.65
1 2 3
6 5 4
0.2
0.9±0.1
s Basic Part Number of Element
q
0.7±0.1
UN111F+UN111H [Tr1] [Tr2]
1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2)
0 to 0.1
0.2±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Tr1 Collector to emitter voltage Collector current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg
(Ta=25˚C)
Rating.
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Composite Transistors
XP611FH
Silicon PNP epitaxial planer transistor
Unit: mm
0.425 1.25±0.1 0.425
0.2±0.05
For switching/digital circuits
2.1±0.1
0.65
q
q
Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
2.0±0.1
s Features
0.65
1 2 3
6 5 4
0.2
0.9±0.1
s Basic Part Number of Element
q
0.7±0.1
UN111F+UN111H [Tr1] [Tr2]
1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2)
0 to 0.1
0.2±0.
XP611FH Datasheet
