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CAB6R0A23GM4 - Half-Bridge Module

Features

  • Ultra-Low Loss.
  • High Frequency Operation.
  • Zero Turn-Off Tail Current from MOSFET.
  • Normally-Off, Fail-Safe Device Operation.
  • Aluminium Nitride Substrate.
  • Optional Pre-Applied Thermal Interface Material VDS 2300 V RDS(on) 6.0 mΩ DC+ G1 S1 AC T1 G2 S2 -t° T2 DC- Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CAB6R0A23GM4, CAB6R0A23GM4T 2300 V, 6.0 mΩ, Silicon Carbide, Half-Bridge Module Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation • Aluminium Nitride Substrate • Optional Pre-Applied Thermal Interface Material VDS 2300 V RDS(on) 6.
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