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CAB650M17HM3 - Half-Bridge Module

Key Features

  • Ultra-Low Loss.
  • High Frequency Operation.
  • Zero Turn-Off Tail Current from MOSFET.
  • Normally-Off, Fail-Safe Device Operation C VD4S IDS 3 1700 V 2 650 A V+ G1 K1 Mid NTC1 G2 K2 -t° NTC2 V-.

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CAB650M17HM3 5 1700 V, 650 A, Silicon Carbide, Half-Bridge Module D Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation C VD4S IDS 3 1700 V 2 650 A V+ G1 K1 Mid NTC1 G2 K2 -t° NTC2 V- Applications • Railway, Traction, and Motor Drives • EV Chargers • High-Efficiency Converters/Inverters • Renewable Energy • Smart-Grid/Grid-Tied Distributed Generation System Benefits 1 • Enables Compact, Lightweight Systems • Increased System Efficiency, due to Lo4 w Switching & ConduBction Losses of SiC 5 2 • Reduced Thermal Requirements and System Cost 8 6 7 -t° 9 3 Key Parameters Parameter A Symbol Min. Typ. Max.