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C4D10120H 10A Silicon Carbide Schottky Diode

C4D10120H Description

C4D10120H 4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode .
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency stan.

C4D10120H Features

* Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
* Zero Reverse Recovery Current / Forward Recovery Voltage

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Datasheet Details

Part number
C4D10120H
Manufacturer
Wolfspeed
File Size
728.24 KB
Datasheet
C4D10120H-Wolfspeed.pdf
Description
10A Silicon Carbide Schottky Diode

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10A Silicon Carbide Schottky Diode Wolfspeed
Wolfspeed C4D10120H-like datasheet