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WFN1N60C Power MOSFET

WFN1N60C Description

.
Th is Power MO SFET is produced using Winse mi’s advan ced planar stripe, VDMOS technology.

WFN1N60C Features

* 1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V
* Ultra-low Gate charge(Typical 9.1nC)
* Fast Switching Capability
* 100%Avalanche Tested

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Datasheet Details

Part number
WFN1N60C
Manufacturer
Winsemi
File Size
417.53 KB
Datasheet
WFN1N60C-Winsemi.pdf
Description
Power MOSFET

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Power MOSFET Winsemi
Winsemi WFN1N60C-like datasheet