WFN1N60C Power MOSFET

Winsemi

Description

.
Th is Power MO SFET is produced using Winse mi’s advan ced planar stripe, VDMOS technology.

Datasheet Specifications

Features

* 1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V
* Ultra-low Gate charge(Typical 9.1nC)
* Fast Switching Capability
* 100%Avalanche Tested

WFN1N60C Distributors

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Winsemi WFN1N60C-like datasheet