WFN1N60NC - Silicon N-Channel MOSFET

Winsemi

General Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Key Features

0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V.
Ultra-low Gate Charge(Typical 6.1nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) General.

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WFN1N60NC silicon n-channel mosfet by Winsemi - Datasheet Preview

Datasheet Details

Part number	WFN1N60NC
Manufacturer	Winsemi
File Size	673.59 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFN1N60NC Datasheet

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Other Datasheets by Winsemi

Part Number	Description
WFN1N60N	Silicon N-Channel MOSFET
WFN1N60	Silicon N-Channel MOSFET
WFN1N60C	Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WFN1N60NC Silicon N-Channel MOSFET Features ■0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. electronic Lamp ballasts based on half bridge and UPS.