WFF630 Silicon N-Channel MOSFET

Winsemi

Description

WFF630 Silicon N-Channel MOSFET .
This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.

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Datasheet Specifications

Part number: WFF630
Manufacturer: Winsemi
File Size: 687.91 KB
Datasheet: WFF630-Winsemi.pdf
Description: Silicon N-Channel MOSFET

Features

* 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V
* Ultra-low Gate Charge(Typical 22nC)
* Fast Switching Capability
* 100%Avalanche Tested

Applications

* such as automotive, high efficiency switching for DC/DC converters, and DC motor control. Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to

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WFF630 Silicon N-Channel MOSFET Winsemi

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