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WFF6N90 - N-Channel MOSFET

Description

This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

  • RDS(on) (Max 2.4 Ω )@VGS=10V.
  • Gate Charge (Typical 33nC).
  • Improved dv/dt Capability, High Ruggedness.
  • 100% Avalanche Tested.
  • Maximum Junction Temperature Range (150°C) General.

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Datasheet Details

Part number WFF6N90
Manufacturer Wisdom technologies
File Size 103.38 KB
Description N-Channel MOSFET
Datasheet download datasheet WFF6N90 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PROVISIONAL Wisdom Semiconductor WFF6N90 N-Channel MOSFET Features ■ RDS(on) (Max 2.4 Ω )@VGS=10V ■ Gate Charge (Typical 33nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Symbol 1. Gate{ { 2. Drain ● ◀▲ ● ● { 3.
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