Datasheet4U Logo Datasheet4U.com

PFB150N08S - N-Channel Super Junction MOSFET

Features

  •  100% EAS Test  Super high density cell design  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Extended Safe Operating Area  Lower RDS(ON) : 4.0 mΩ (Typ. ) @VGS=10V.

📥 Download Datasheet

Datasheet Details

Part number PFB150N08S
Manufacturer Wing On
File Size 842.12 KB
Description N-Channel Super Junction MOSFET
Datasheet download datasheet PFB150N08S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PFB2N60 N-Channel MOSFET Pyramis Corporation
PFB3L200 MOS Schottky Rectifier PFC Device Corporation
PFB3L40 MOS Schottky Rectifier PFC Device Corporation
PFB3M40 MOS Schottky Rectifier PFC Device Corporation
PFB455JR FILTERS Murata Electronics

Other Datasheets by Wing On

Part Number Description
PFB15T110 N-Channel Super Junction MOSFET
PFB15T140 N-Channel Super Junction MOSFET
PFB100N10S N-Channel Super Junction MOSFET
PFB10N80A N-Channel MOSFET
PFB110N10S N-Channel Super Junction MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PFP150N08S / PFB150N08S FEATURES  100% EAS Test  Super high density cell design  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Extended Safe Operating Area  Lower RDS(ON) : 4.0 mΩ (Typ.) @VGS=10V APPLICATION  DC Motor control for E-bike & Power tools  Amplifier and car booster  Load Switch  DC-DC converters PFP150N08S/PFB150N08S 80V N-Channel MOSFET BVDSS = 80 V RDS(on) = 4.0 mΩ ID = 150 A Drain  Gate  ● ◀▲ ● ●  Source TO-220 1 2 3 1.Gate 2. Drain 3. Source D2-PAK 2 1 3 1.Gate 2. Drain 3.
Published: |