WNM2072 Datasheet (WillSEMI)

WNM2072, MOSFET

Typical Rds(on) (Ω) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.315@ VGS=1.8V Http://www.sh-willsemi.com G S D DFN1006-3L The WNM2072 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable

WNM2072 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* Extremely Low Threshold Voltage

* Small package DFN1006-3L Applications D GS Pin configuration (Top view) F F = Device Code

* = Month (A~Z) Marking

* Small Signal Swi