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S9014
NPN General Purpose Transistors
TO-92
www.DataSheet4U.com
1. EMITTER 2. BASE 3. COLLECTOR
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ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 45 50 5.0 100 0.4 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C C
ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 100uAdc, IB=0) Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) Collector Cutoff Current (VCB= 50 Vdc, IE=0) Emitter Cutoff Current (VEB= 3.0V d c, I C=0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 45 50 5.0 Max 0.1 0.