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PNP General Purpose Transistors
P b Lead(Pb)-Free
V CEO
S9012LT1
Value
-25
-40 -5 -500
3
1 2
SOT-23
S9012LT1=2T1
-0.1 -100 -100 E=-20Vdc,IE= 0 ) -40 -5.0
300
2.4 417
-25 -40 -5.0 O -0.1
-0.1 -0.1
u u u
WEITRON
http://www.weitron.com.tw
S9012LT1
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Max
ON CHARACTERISTICS
DC Current Gain (IC=-50 mAdc, VCE=-1.0 Vdc) (IC=-500 mAdc, VCE=-1.0 Vdc)
Collector-Emitter Saturation Voltage (IC=-500 mAdc, IB=-50mAdc)
Base-Emitter Saturation Voltage (IC=-500 mAdc, IB=-50mAdc)
Base-Emitter Voltage ( IE=-100mA)
hFE (1) hFE (2) VCE(sat)
VBE(sat)
VEBF
120 40
-
-
-
350
-0.6 -1.2
-1.
S9012LT1 Datasheet
