WCMC2016V1X Datasheet - Weida Semiconductor

WCMC2016V1X 128K x 16 Pseudo Static RAM DIE

Die (25-30 mil) in wafer form. Die (14 mil) in wafer form. Die (11 mil) in wafer form. Min 617 320 252 Nom 685 355 280 Max 754 391 308 Unit µm µm µm www.DataSheet4U.com Weida Semiconductor, Inc. 38-xyxyx Revised August 22, 2001 ADVANCE INFORMATION Bond Pad Locations 64 1 2 3 4 5 6 7 8 9 10 11 12.

ADVANCE INFORMATION General Physical Specification WCMC2016V1X 128K x 16 Pseudo Static RAM DIE Substrate Connection Req.: Ground Wafer Diameter [mm]: 200.00 Die Size [µm]: 4010.74 x 1565.84 Step Size [µm]: 4095.44 x 1650.89 Scribe Size [µm]: 84.70 x 84.94 Pad Count: 64 Pad Size [µm]: 73.6 x 73.6 For product parameters and availability, please refer to the WCMC2016V1X product datasheet available on the Cypress Semiconductor Website (http://www.cypress.com). Mfg Part Number: GC2016V5A Die Part .

WCMC2016V1X_WeidaSemiconductor.pdf