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BC847S NPN Transistor

BC847S Description

RoHS BC847S Multi-Chip TRANSISTOR (NPN) SOT-363 .

BC847S Features

* Power dissipation DPCM : 300 mW (Tamb=25℃) TCollector current . ,LICM : 200 mA Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range OTJ,Tstg: -55℃to +150℃ CMARKING: 1C ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) ICParameter NCollector-

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Datasheet Details

Part number
BC847S
Manufacturer
WILLAS
File Size
241.42 KB
Datasheet
BC847S-WILLAS.pdf
Description
NPN Transistor

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NPN Transistor WILLAS
WILLAS BC847S-like datasheet