Datasheet4U.com

1SS181 - DIODE

WEJ

📥 Download Datasheet

1SS181 Datasheet Preview — Preview of 1SS181 PDF

datasheet Preview Page 2

Datasheet Details

Part number	1SS181
Manufacturer	WEJ
File Size	159.06 KB
Description	DIODE
Datasheet	1SS181-WEJ.pdf

1SS181 Product details

Features

DPower dissipation PD : 150 mW (Tamb=25oC) TForward Current . ,LIF : 100 mA Reverse Voltage VR : 80V Operating and storage junction temperature range OTj, Tstg : -55 oC to +150oC 1 1. 2.4 1.3 SOT-23 3 2 NIC CMarking:A3 2.9 1.9 0.95 0.95 0.4 Unit:mm.

📁 1SS181 Similar Datasheet

1SS184 - Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor)
1SS187 - Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor)
1SS101 - SUPER HIGH SPEED SWITCHING DIODE (XIN SEMICONDUCTOR)
1SS104 - SILICON DIODE (Toshiba Semiconductor)
1SS106 - SILICON SCHOTTKY BARRIER DIODE (SEMTECH)
1SS108 - Silicon Schottky Barrier Diode (Hitachi Semiconductor)
1SS110 - Silicon Diode (Hitachi Semiconductor)
1SS118 - Silicon Epitaxial Planar Diode (Hitachi Semiconductor)

Other Datasheets by WEJ

1SS190 - DIODE
1SS193 - DIODE
1SS196 - DIODE
1SS226 - DIODE
1SS355 - DIODE
1SS387 - DIODE

Published: Apr 10, 2016 |