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1SS193 - DIODE

Features

  • TPower dissipation PD : 150 mW (Tamb=25oC) . ,LForward Current IF : 100 mA Reverse Voltage VR : 80V OOperating and storage junction temperature range Tj, Tstg : -55 oC to +150 oC 1 1. 2.4 1.3 SOT-23 3 2 ONIC CMarking:F3 2.9 1.9 0.95 0.95 0.4 Unit:mm.

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Datasheet Details

Part number 1SS193
Manufacturer WEJ
File Size 91.19 KB
Description DIODE
Datasheet download datasheet 1SS193 Datasheet

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Full PDF Text Transcription

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RoHS 1SS193 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Reverse Voltage VR : 80V OOperating and storage junction temperature range Tj, Tstg : -55 oC to +150 oC 1 1. 2.4 1.3 SOT-23 3 2 ONIC CMarking:F3 2.9 1.9 0.95 0.95 0.4 Unit:mm TRELECTRICAL CHARACTERISTICS o C(Ta=25 C unless otherwise specified) Parameter Symbol EReverse breakdown voltage V(BR) LReverse Voltage leakage current IR EForward Voltage JDiode Capacitance WEReverse Recovery Time VF Ctot trr Test Condition IR=100 A VR=80V IF=100mA VR=0V f=1MHz IF=IR=10mA Irr=0.1IR MIN. MAX. Unit 80 V 0.5 A 1.2 V 3 pF 4 nS WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.
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