VT760-E3 Trench MOS Barrier Schottky Rectifier

Vishay

Description

VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V a.

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Datasheet Specifications

Part number: VT760-E3
Manufacturer: Vishay ↗
File Size: 137.48 KB
Datasheet: VT760-E3-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for

Applications

* For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. A NC VBT760 NC K A HEATSINK VIT760 NC A A K NC K HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 7.5 A TJ max. Package 7.5 A

VT760-E3 Distributors

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VT760-E3 Trench MOS Barrier Schottky Rectifier Vishay

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