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VT760 Trench MOS Barrier Schottky Rectifier

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Description

www.DataSheet.co.kr New Product VT760, VIT760 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A .

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Datasheet Specifications

Part number
VT760
Manufacturer
Vishay ↗
File Size
176.20 KB
Datasheet
VT760_Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified 2 VT760 PIN 1 PIN 2 CASE A VIT760 NC A 1 K NC K HEATSINK

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 7.5 A TJ max. 7.5 A 60 V 100 A 0.60 V 150 °C MECHANICAL DATA Case: TO-220AC and TO-262AA Molding compound mee

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