VT3045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

VT3045C-M3, VIT3045C-M3, VT3045CHM3, VIT3045CHM3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier.

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Datasheet Specifications

Part number: VT3045C-M3
Manufacturer: Vishay ↗
File Size: 138.64 KB
Datasheet: VT3045C-M3-Vishay.pdf
Description: Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Material categorization: For definitions of compliance please see www. visha

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package 2 x 15 A 45 V 200 A 0.39 V 150 °C TO-220AB, TO-262AA Diode variations Common cathode

VT3045C-M3 Distributors

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VT3045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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