Datasheet4U Logo Datasheet4U.com

VS-MBRB1035-M3 High Performance Schottky Rectifier

VS-MBRB1035-M3 Description

www.vishay.com VS-MBRB1035-M3, VS-MBRB1045-M3 Vishay Semiconductors High Performance Schottky Rectifier, 10 A Base cathode 2 2 1 3 D2PAK (TO-263AB.
This Schottky rectifier has been optimized for low reverse leakage at high temperature.

VS-MBRB1035-M3 Features

* 150 °C TJ operation
* TO-220 and D2PAK packages
* Low forward voltage drop
* High frequency operation
* High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
* Guard ring for enhanced ruggedness an

VS-MBRB1035-M3 Applications

* are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform IFRM VRRM IFSM TC = 135 °C tp = 5 μs sine VF 10 Apk, TJ = 125 °C TJ Range VALUES 10 20 35/45 1060 0.57 -6

📥 Download Datasheet

Preview of VS-MBRB1035-M3 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

📌 All Tags

High Performance Schottky Rectifier Vishay
Vishay VS-MBRB1035-M3-like datasheet