VS-3C12ET07S2L-M3 650V Gen 3 Power SiC Merged PIN Schottky Diode

Vishay

Description

www.vishay.com VS-3C12ET07S2L-M3 Vishay Semiconductors 650 V Gen 3 Power SiC Merged PIN Schottky Diode, 12 A Base cathode 4 4 D2PAK 2L (TO-263A.
/ APPLICATIONS Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness.

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Datasheet Specifications

Part number: VS-3C12ET07S2L-M3
Manufacturer: Vishay ↗
File Size: 182.41 KB
Datasheet: VS-3C12ET07S2L-M3-Vishay.pdf
Description: 650V Gen 3 Power SiC Merged PIN Schottky Diode

Features

* Majority carrier diode using Schottky technology on SiC wide band gap material
* Improved VF and efficiency by thin wafer technology
* Positive VF temperature coefficient for easy paralleling
* Virtually no recovery tail and no switching losses
* Temperature

Applications

* Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavior. Typical appl

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VS-3C12ET07S2L-M3 650V Gen Power SiC Merged PIN Schottky Diode Vishay

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