VS-3C02EJ07-M3 2A 650V Gen3 Power SiC Merged PIN Schottky Diode

Vishay

Description

www.vishay.com VS-3C02EJ07-M3 Vishay Semiconductors 650 V Gen 3 Power SiC Merged PIN Schottky Diode, 2 A eSMP® Series Top View Bottom View SlimS.
/ APPLICATIONS Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness.

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Datasheet Specifications

Part number: VS-3C02EJ07-M3
Manufacturer: Vishay ↗
File Size: 151.77 KB
Datasheet: VS-3C02EJ07-M3-Vishay.pdf
Description: 2A 650V Gen3 Power SiC Merged PIN Schottky Diode

Features

* Minimum creepage distance 3.2 mm guaranteed by design
* Comparative Tracking Index: CTI  600
* High CTI molding compound provides excellent electrical insulation at relevant working voltages
* Positive VF temperature coefficient for easy paralleling
* Virtu

Applications

* Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimized for extreme high-speed hard switching over a wide temperature range. It is suited for demanding applications, such as bootstrap and anti-parallel diodes in AC/DC and DC/DC converters. MECHANICAL DAT

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VS-3C02EJ07-M3 650V Gen3 Power SiC Merged PIN Schottky Diode Vishay

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