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VI30150C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Vishay

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VI30150C Dual High-Voltage Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – VI30150C

Datasheet Details

Part number	VI30150C
Manufacturer	Vishay
File Size	151.85 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VI30150C Datasheet
Additional preview pages of the VI30150C datasheet.

Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Published: Feb 2, 2012 |