Datasheet4U Logo Datasheet4U.com

VI30100C-E3 Datasheet - Vishay

VI30100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

VI30100C-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Low thermal resistance

* Solder bath temperature 275 °C max

VI30100C-E3 Datasheet (208.57 KB)

Preview of VI30100C-E3 PDF
VI30100C-E3 Datasheet Preview Page 2 VI30100C-E3 Datasheet Preview Page 3

Datasheet Details

Part number:

VI30100C-E3

Manufacturer:

Vishay ↗

File Size:

208.57 KB

Description:

Dual high voltage trench mos barrier schottky rectifier.

📁 Related Datasheet

VI30100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VI30100S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VI30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VI30100SG High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VI30120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VI30120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VI30120S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)

VI30120S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

TAGS

VI30100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

VI30100C-E3 Distributor