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VB30M120C - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

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Datasheet Details

Part number: VB30M120C
Manufacturer: Vishay ↗
File Size: 100.55 KB
Datasheet: VB30M120C-Vishay.pdf
Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier

VB30M120C Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Available.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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