VB30120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.DataSheet.co.kr New Product V30120C, VF30120C, VB30120C & VI30120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky R.

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Datasheet Specifications

Part number: VB30120C
Manufacturer: Vishay ↗
File Size: 226.06 KB
Datasheet: VB30120C_Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation 2 V30120C PIN 1 PIN 3 PIN 2 CASE 3 1 VF30120C PIN 1 PIN 3 PIN 2 2 3
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

Applications

* For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. 1 TO-263AB K K TO-262AA 2 1 1 VB30120C PIN 1 PIN 2 K HEATSINK 2 3 VI30120C PIN 1 PIN 3 PIN 2 K MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-2

VB30120C Distributors

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VB30120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

Vishay VB30120C-like datasheet