V8PM12 Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V8PM12 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.

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Datasheet Specifications

Part number: V8PM12
Manufacturer: Vishay ↗
File Size: 107.72 KB
Datasheet: V8PM12-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Very low profile - typical height of 1.1 mm Available
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
* AEC-Q101 qualified

Applications

* For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications. Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 8.0 A TJ max. 8.0 A 120 V 140 A 0.63 V 175 °C Package SMPC (TO-277A) Circuit configuration Single MECHANICAL DATA

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V8PM12 Trench MOS Barrier Schottky Rectifier Vishay

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