V6WM100C-M3 Dual Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V6WM100C-M3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 3 A TMBS® TO-252 (.

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Datasheet Specifications

Part number: V6WM100C-M3
Manufacturer: Vishay ↗
File Size: 122.64 KB
Datasheet: V6WM100C-M3-Vishay.pdf
Description: Dual Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
* Material categorization: For definitions of compli

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 3 A (TA = 125 °C) TJ max. Package 2x3A 100 V 75 A 0.56 V 150 °C TO-252 (D-PAK) Diode variation Dual common

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V6WM100C-M3 Dual Trench MOS Barrier Schottky Rectifier Vishay

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