V6WL45C Dual Trench MOS Barrier Schottky Rectifier

VISHAY

Description

V6WL45C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.34 V at IF = 3 A .

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Datasheet Specifications

Part number: V6WL45C
Manufacturer: Vishay ↗
File Size: 177.22 KB
Datasheet: V6WL45C-VISHAY.pdf
Description: Dual Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation K Dual Trench MOS Barrier Schottky Rectifier TMBS® TO-252 (D-PAK)
* Meets MSL level 1 , per J-STD- 020, LF maximum peak

Applications

* For use in high frequency DC/D C conve rters, switching power supplies, freewheelin g diodes, O R-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 3 A (TA = 125 °C) TJ max. Package Diode variation 2x3A 45 V 80 A 0.34 V 150 °C TO-252 (D-P

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V6WL45C Dual Trench MOS Barrier Schottky Rectifier VISHAY

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