V35PWM12 Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V35PWM12 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF =.

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Datasheet Specifications

Part number: V35PWM12
Manufacturer: Vishay ↗
File Size: 116.65 KB
Datasheet: V35PWM12-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Very low profile - typical height of 1.3 mm
* Trench MOS Schottky technology
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

Applications

* For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. MECHANICAL DATA Case: SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant,

V35PWM12 Distributors

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