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V35DM120 - Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology generation 2 Available.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYP.

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Datasheet Details

Part number V35DM120
Manufacturer Vishay
File Size 121.39 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V35DM120 Datasheet

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Full PDF Text Transcription

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www.vishay.com V35DM120 Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.43 V at IF = 5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View Anode 1 Anode 2 K Cathode LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models FEATURES • Trench MOS Schottky technology generation 2 Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.
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